? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c -100 v v dgr t j = 25 c to 150 c, r gs = 1m -100 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c -18 a i dm t c = 25 c, pulse width limited by t jm - 60 a i a t c = 25 c -18 a e as t c = 25 c 200 mj p d t c = 25 c83w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-252 0.35 g to-263 2.50 g to-220 3.00 g ds99966c(01/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -100 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 15v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v - 3 a t j = 125 c -100 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 120 m trenchp tm power mosfets p-channel enhancement mode avalanche rated IXTY18P10T ixta18p10t ixtp18p10t v dss = -100v i d25 = -18a r ds(on) 120 m features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications g = gate d = drain s = source tab = drain to-252 (ixty) to-263 aa (ixta) g s d (tab) g d s to-220ab (ixtp) d (tab) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTY18P10T ixta18p10t ixtp18p10t ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 8 13 s c iss 2100 pf c oss v gs = 0v, v ds = - 25v, f = 1mhz 185 pf c rss 80 pf t d(on) 19 ns t r 26 ns t d(off) 44 ns t f 22 ns q g(on) 39 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 17 nc q gd 9 nc r thjc 1.5 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v -18 a i sm repetitive, pulse width limited by t jm - 72 a v sd i f = -18a, v gs = 0v, note 1 -1.5 v t rr 62 ns q rm 164 nc i rm - 5.3 a resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = - 9a, -di/dt = -100a/ s v r = - 50v, v gs = 0v pins: 1 - gate 2 - drain 3 - source to-220 outline to-252 outline pins: 1 - gate 2,4 - drain 3 - source dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 to-263 outline 1. gate 2. drain 3. source 4. drain dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005
? 2013 ixys corporation, all rights reserved IXTY18P10T ixta18p10t ixtp18p10t fig. 1. output characteristics @ t j = 25oc -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 5 v - 6 v - 7 v fig. 2. extended output characteristics @ t j = 25oc -70 -60 -50 -40 -30 -20 -10 0 -30 -25 -20 -15 -10 -5 0 v ds - volts i d - amperes v gs = -10v - 5 v - 6 v - 7 v - 8 v - 9 v fig. 3. output characteristics @ t j = 125oc -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 7v - 6v - 5v fig. 4. r ds(on) normalized to i d = - 9a value vs. junction temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = -18a i d = - 9a fig. 5. r ds(on) normalized to i d = - 9a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTY18P10T ixta18p10t ixtp18p10t fig. 7. input admittance -24 -20 -16 -12 -8 -4 0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 20 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = - 50v i d = - 9a i g = -1ma fig. 11. capacitance 10 100 1,000 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms - - - -- - - 100ms -
? 2013 ixys corporation, all rights reserved IXTY18P10T ixta18p10t ixtp18p10t fig. 14. resistive turn-on rise time vs. drain current 21 22 23 24 25 26 27 28 29 30 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 i d - amperes t r - nanoseconds r g = 10 ? , v gs = -10v v ds = - 50v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30 r g - ohms t r - nanoseconds 0 10 20 30 40 50 60 70 80 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = -18a, - 9a fig. 16. resistive turn-off switching times vs. junction temperature 19 20 21 22 23 24 25 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 30 34 38 42 46 50 54 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v gs = -10v v ds = - 50v i d = -18a, - 9a fig. 17. resistive turn-off switching times vs. drain current 30 33 36 39 42 45 48 51 54 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 i d - amperes t f - nanoseconds 19 20 21 22 23 24 25 26 27 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v gs = -10v v ds = - 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 21 22 23 24 25 26 27 28 29 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? , v gs = -10v v ds = - 50v i d = - 9a i d = -18a fig. 18. resistive turn-off switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 65 10 12 14 16 18 20 22 24 26 28 30 32 34 r g - ohms t f - nanoseconds 10 20 30 40 50 60 70 80 90 100 110 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = - 9a, -18a
ixys reserves the right to change limits, test conditions, and dimensions. IXTY18P10T ixta18p10t ixtp18p10t ixys ref: t_18p10t(a1)11-05-10-a fig. 19. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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